Investigation of p-GaN thermal annealing and light emitting diode - 文章详情页

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摘要：

The　p-GaN　investigated　was　grown　on　sapphire　substrates　by　metal-organic　chemical　vapor　deposition,　and　thermal　annealing　under　N2　ambient.　On　the　different　thermal　temperature　and　time　conditions,　its　electrical　properties　were　demonstrated　by　Hall　measure　system,　and　a　series　of　blue　LEDs　were　studied　by　PL　also,　then,　their　full　width　at　half　maximum　(FWHM)　broaden　and　integral　area　reduction　percentage　of　LEDs　quantum　well　were　compared.　It　was　demonstrated　the　p-GaN　has　higher　hole　carrier　concentration　under　the　825°C/8　minutes　condition,　and　LEDs　FWHM　broaden　and　integral　area　reduction　percentage　were　less　under　the　750°C/30　minutes　condition,　and　LEDs　positive　voltage　were　lower.

关键词：

Annealing Charge carriers Electric potential Full width at half maximum Gallium nitride Hall effect Light emitting diodes Metallorganic chemical vapor deposition Sapphire Semiconductor quantum wells Substrates

作者机构：

[ 1 ] [Xing, Yanhui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Han, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, Jianping]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Niu, Nanhui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Deng, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Shen, Guangdi]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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电子邮件地址：

xingyanhui@bjut.edu.cn

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