High temperature characteristics of Ti/Al/Ni/Au multilayer ohmic contact to n-GaN - 文章详情页

作者：

Zhang, Yuezong (Zhang, Yuezong.) | Feng, Shiwei (Feng, Shiwei.) (学者：冯士维) | Zhang, Gongchang (Zhang, Gongchang.) | Wang, Chengdong (Wang, Chengdong.) | Lu, Changzhi (Lu, Changzhi.)

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摘要：

The　high　temperature　characteristics　of　the　ohmic　contact　of　Ti/Al/Ni/Au　(15　nm/220　nm/40　nm/50　nm)　multilayer　contacts　to　n-type　GaN(Nd=3.7　×　1017　cm-3,　Nd=3.0　×　1018　cm-3)　are　studied.　The　annealed　samples　still　show　excellent　ohmic　contact　characteristics　at　500°C.　Contact　resistivity　increases　with　the　rise　of　temperature.　Furthermore,　the　tendency　of　increase　is　related　to　doping　concentration:　The　higher　the　doping　concentration,　the　slower　the　increase　of　the　contact　resistivity　with　the　temperature.　Ti/Al/Ni/Au　ohmic　contact　to　heavy　doping　n-GaN　has　better　high　temperature　reliability.　The　contact　resistivity　shows　unrecoverable　characteristics　after　the　samples　are　placed　under　the　thermal　stress.

关键词：

Annealing Doping (additives) Gallium nitride Multilayers Ohmic contacts Thermal stress

作者机构：

[ 1 ] [Zhang, Yuezong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Feng, Shiwei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Zhang, Gongchang]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Wang, Chengdong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Lu, Changzhi]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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电子邮件地址：

zhangyz@emails.bjut.edu.cn

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