Reservoir effect in multi-layer metal system - Details

Author：

Guo, Chunsheng (Guo, Chunsheng.) | Li, Xiuyu (Li, Xiuyu.) | Li, Zhiguo (Li, Zhiguo.) | Wu, Yuehua (Wu, Yuehua.)

Indexed by：

EI Scopus PKU CSCD

Abstract：

Metal　iron　reservoirs　in　multi-layer　metal　system　with　W　via　have　great　effects　on　the　electro-migration　lifetime.　In　this　study,　the　sample　with　different　reservoir　structure　was　designed　for　the　electro-migration　test.　The　effect　of　reservoir　area,　via　displace,　amount　and　size　on　electro-migration　lifetime　was　concluded,　and　reservoir　area　play　a　significant　role　among　all　factors.

Keyword：

Semiconductor devices Metal ions

Author Community：

[ 1 ] [Guo, Chunsheng]Reliability Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Li, Xiuyu]Reliability Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Li, Zhiguo]Reliability Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Wu, Yuehua]Reliability Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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Source ：

Chinese Journal of Semiconductors

ISSN： 0253-4177

Year： 2007

Issue： SUPPL.

Volume： 28

Page： 452-456

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 0

Affiliated Colleges：

信息学部

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