Study on enhancement of light output power for GaN-based LED by coating passivation layers - 文章详情页

作者：

Da, Xiaoli (Da, Xiaoli.) | Shen, Guangdi (Shen, Guangdi.) | Xu, Chen (Xu, Chen.) (学者：徐晨) | Zhu, Yanxu (Zhu, Yanxu.)

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摘要：

In　this　paper,　we　simulate　the　relationship　between　the　reflectivity　and　the　light　incident　angle.　When　the　incident　angle　is　more　than　23°,　the　light　can　not　be　extracted　from　LED　top　emitting　surface.　We　fabricate　SiON　and　SiNx　films　respectively　at　low　temperature　(100　°C)　through　Plasma　Enhanced　Chemical　Vapor　Deposition　(PECVD)　to　serve　as　the　passivation　layer　of　GaN-LEDs,　and　then　compare　their　light　output　power.　The　light　output　power　of　the　LED　improved　greatly　after　depositing　the　SiON　passivation　layer.

关键词：

Gallium nitride Light emitting diodes Light reflection Passivation Plasma enhanced chemical vapor deposition

作者机构：

[ 1 ] [Da, Xiaoli]Optoelectronic Technology Lab., Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Shen, Guangdi]Optoelectronic Technology Lab., Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Xu, Chen]Optoelectronic Technology Lab., Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Zhu, Yanxu]Optoelectronic Technology Lab., Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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电子邮件地址：

dada365@emails.bjut.edu.cn

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