Effect of hydrophilic and hydrophobic processes on the transmittance of a GaAs/GaN bonding interface - 文章详情页

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摘要：

Bonding　of　GaAs/GaN　was　successfully　achieved　at　600°C　in　N2　atmosphere　for　1h,　with　two　different　chemical　pretreatments　of　hydrophilic　and　hydrophobic　processes.　Both　methods　can　achieve　high　bonding　strength　and　large　bonding　area.　Based　on　the　mechanics　of　the　two　different　pretreatments,　the　transmittance　of　the　bonding　interface　with　different　pretreatments　was　studied.　Results　of　the　transmission　spectrum　indicate　that　the　hydrophobic　process　can　yield　a　higher　transmittance　of　94.7%　at　630　nm.　Devices　were　fabricated　to　execute　the　EL　spectrum　measurement,　the　results　of　which　are　consistent　with　the　transmission　spectrum.

关键词：

Bonding Electroluminescence Gallium nitride Light transmission Semiconducting gallium arsenide

作者机构：

[ 1 ] [Guo, Jing]Beijing Optoelectronic Technology Laboratory, Institute of Electronic, Information and Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Guo, Xia]Beijing Optoelectronic Technology Laboratory, Institute of Electronic, Information and Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liang, Ting]Beijing Optoelectronic Technology Laboratory, Institute of Electronic, Information and Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Gu, Xiaoling]Beijing Optoelectronic Technology Laboratory, Institute of Electronic, Information and Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Lin, Qiaoming]Beijing Optoelectronic Technology Laboratory, Institute of Electronic, Information and Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Institute of Electronic, Information and Engineering, Beijing University of Technology, Beijing 100022, China

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maggiejingjing@gmail.com

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