By　introducing　layer-by-layer　(LBL)　growth　technology　and　hydrogen　plasma　treatment　on　the　stacking　layers　in　a　hot-wire-assisted　microwave　electron-cyclotron-resonance　chemical　vapor　deposition　(HW-MWECR　CVD)　system,　we　fabricate　a　series　of　microcrystalline　silicon　(μc-Si:H)　films　with　different　thicknesses.　It　is　found　that　when　the　thickness　of　the　films　is　less　than　0.55μm,　they　have　the　typical　characteristics　of　a-Si:H　films,　whose　photoconductivity　degrades　rapidly.　But　when　the　film　thickness　is　in　the　range　of　0.60-0.70μm,　they　have　characteristics　of　both　amorphous　and　microcrystalline　silicon　films,　in　which　the　photoconductivity　is　very　sensitive　to　changes　in　thickness,　but　the　decay　ratio　of　the　photoconductivity　is　relatively　stable.　When　the　thickness　of　the　films　is　greater　than　0.80μm,　they　have　microcrystalline　silicon　properties.　Moreover,　the　photoconductivity　does　not　change　after　simulating　illumination　for　53.5h.