Excessive　phosphine　is　needed　to　get　enough　V/III　ratio　during　common　growth　process　of　AlGaInP　material　by　MOCVD　in　order　to　get　crystal　structure　with　high　quality.　AlGaInP　was　deposited　by　LP-MOCVD　system　with　different　phosphine　flows　(1000　ml/min　and　400　ml/min,　corresponding　V/III　ratios　were　723　and　289),　and　the　result　was　investigated　by　means　of　MOCVD　in-situ　software,　double　crystal　X-ray　diffraction　system,　photoluminescence　(PL)　and　so　on.　It　was　observed　that　V/III　ratio　affects　not　only　the　growth　rate　of　AlGaInP　but　also　the　crystal　lattice　mismatch　between　epitaxial　material　and　GaAs　substrate　as　well　as　optical　properties　of　AlGalnP.