Width　scaling,　length　scaling,　base　stripe-number　scaling　and　distance　between　emitter　and　base　scaling　effect　on　high-frequency　noise　in　SiGe　HBTs　are　quantified　from　an　experimental　perspective.　Results　show　that　the　increase　of　emitter　length,　base　stripe　number,　and　the　decrease　of　distance　between　emitter　and　base　are　proved　to　be　effective　ways　to　improve　noise　performance　of　SiGe　HBTs.　Particularly,　the　effect　of　the　last　method　is　remarkably　good.　As　the　distance　reduces　from　1　μm　to　0.5　μm,　the　minimum　noise　figure　can　be　reduced　by　9　dB　at　2　GHz　and　reaches　1.5　dB　at　0.5　GHz　and　3　dB　at　2　GHz.