收录:
摘要:
Width scaling, length scaling, base stripe-number scaling and distance between emitter and base scaling effect on high-frequency noise in SiGe HBTs are quantified from an experimental perspective. Results show that the increase of emitter length, base stripe number, and the decrease of distance between emitter and base are proved to be effective ways to improve noise performance of SiGe HBTs. Particularly, the effect of the last method is remarkably good. As the distance reduces from 1 μm to 0.5 μm, the minimum noise figure can be reduced by 9 dB at 2 GHz and reaches 1.5 dB at 0.5 GHz and 3 dB at 2 GHz.
关键词:
通讯作者信息:
电子邮件地址:
来源 :
Journal of Functional Materials and Devices
ISSN: 1007-4252
年份: 2007
期: 5
卷: 13
页码: 495-498
归属院系: