作者：
Han, Jun
(Han, Jun.)
|
Shi, Fengfeng
(Shi, Fengfeng.)
|
Xing, Yanhui
(Xing, Yanhui.)
|
Wan, Peiyuan
(Wan, Peiyuan.)
|
Gao, Zhiyuan
(Gao, Zhiyuan.)
|
Hu, Xiaoling
(Hu, Xiaoling.)
|
Li, Tao
(Li, Tao.)
|
Cao, Shiwei
(Cao, Shiwei.)
|
Zhang, Yao
(Zhang, Yao.)
摘要：
The low-temperature GaN (LT-GaN) and high-temperature AlN (HT-AlN) buffer layers were grown on m-plane sapphire by metal-organic chemical vapour deposition. The following semi-polar (11-22) GaN thin films were deposited under high- and low-pressure growth stages. Anisotropy of (11-22) GaN grown on HT-AlN buffer along two in-planar directions ([11-2-3] and [-1100]) were clearly suppressed, the maximum variation of the X-ray rocking curve full width at half maximum of (11-22) GaN on LT-GaN buffer was 0.2498 degrees, that of (11-22) GaN on HT-AlN buffer was 0.0488 degrees. The X-ray diffraction results of on-axis and off-axis both indicated that the crystal quality of the epitaxial GaN layer with HT-AlN buffer was obviously improved, and surface morphology was much smoother.
关键词：
buffer layers
LT-GaN buffer
high-pressure growth stages
X-ray rocking curve full width at half maximum
low-temperature GaN buffer layers
HT-AlN buffer
aluminium compounds
high-pressure effects
semiconductor growth
m-plane sapphire
high-temperature effects
III-V semiconductors
high-temperature AlN buffer layers
gallium compounds
surface morphology
in-planar directions
AlN-GaN
metal-organic chemical vapour deposition
MOCVD
epitaxial GaN layer
vapour phase epitaxial growth
X-ray diffraction
low-pressure growth stages
semiconductor epitaxial layers
Al2O3
crystal quality
wide band gap semiconductors
semipolar (11-22) GaN thin films
