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作者:

Feng, Shi-Wei (Feng, Shi-Wei.) (学者:冯士维) | Li, Ying (Li, Ying.) | Sun, Jing-Ying (Sun, Jing-Ying.) | Xie, Xue-Song (Xie, Xue-Song.) | Yang, Ji (Yang, Ji.) | Zhang, Yue-Zong (Zhang, Yue-Zong.) | Lu, Yi-Cheng (Lu, Yi-Cheng.)

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摘要:

A ZnO photoconductive UV detector is fabricated on ZnO film grown by MOCVD based on Al/Au interdigital electrode. Nonalloyed Al/Au metallization scheme forms good ohmic contact on n-type ZnO. The dark and photoilluminated currents increase linearly with bias voltage. The cutoff wavelength of the detector is 368 nm, and it is also in response to the blue and green light. XPS analysis shows that there are oxygen vacancy and zinc interstitial in the ZnO film, and the nonstoichiometric ZnO film has influence on the photoresponse time of the detector.

关键词:

Aluminum Copper Electrodes Fabrication Metallorganic chemical vapor deposition Ohmic contacts Thin films Ultraviolet detectors X ray photoelectron spectroscopy Zinc oxide

作者机构:

  • [ 1 ] [Feng, Shi-Wei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Li, Ying]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Sun, Jing-Ying]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Xie, Xue-Song]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Yang, Ji]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Zhang, Yue-Zong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Lu, Yi-Cheng]Department of Computer and Electrical Eng., Rutgers University, NJ 08854, United States

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来源 :

Journal of Beijing University of Technology

ISSN: 0254-0037

年份: 2007

期: 7

卷: 33

页码: 678-681

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