Fabrication and study of ZnO photoconductive UV detector - 文章详情页

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A　ZnO　photoconductive　UV　detector　is　fabricated　on　ZnO　film　grown　by　MOCVD　based　on　Al/Au　interdigital　electrode.　Nonalloyed　Al/Au　metallization　scheme　forms　good　ohmic　contact　on　n-type　ZnO.　The　dark　and　photoilluminated　currents　increase　linearly　with　bias　voltage.　The　cutoff　wavelength　of　the　detector　is　368　nm,　and　it　is　also　in　response　to　the　blue　and　green　light.　XPS　analysis　shows　that　there　are　oxygen　vacancy　and　zinc　interstitial　in　the　ZnO　film,　and　the　nonstoichiometric　ZnO　film　has　influence　on　the　photoresponse　time　of　the　detector.

关键词：

Metallorganic chemical vapor deposition Copper X ray photoelectron spectroscopy Fabrication Thin films Ultraviolet detectors Aluminum Ohmic contacts Electrodes Zinc oxide

作者机构：

[ 1 ] [Feng, Shi-Wei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Li, Ying]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Sun, Jing-Ying]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Xie, Xue-Song]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Yang, Ji]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Zhang, Yue-Zong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Lu, Yi-Cheng]Department of Computer and Electrical Eng., Rutgers University, NJ 08854, United States

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