c-BN　thin　films　were　deposited　on　p-type　Si　wafers　using　RF　reactive　sputter,　and　were　doped　by　implanting　Be　ions　into　them.　The　energy　of　implantation　of　ions　is　190　keV,　and　the　dose　of　implantation　is　between　1015-1016　ions/cm2.The　doped　c-BN　thin　film　have　been　annealed　at　the　temperature　between　400°C　to　800°C,　The　electrics　characteristics　have　obvious　rectification.　The　fitting　results　show　that　the　surface　resistivity　of　c-BN　thin　film　doped　and　annealed　is　lower　3　to　4　orders　and　the　activation　energy　in　different　temperature　area　are　0.54　eV　and　0.32　eV.