Study of (NH4)2S Passivation with Facet of 808 nm Laser Diodes - 文章详情页

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摘要：

A　sulfur-passivation　technique　for　facet　of　808　nm　laser　diodes　(LD)　has　been　investigated.　The　treatment　of　facet　of　LD　can　improve　the　output　characteristics　and　reliability.　Output　power　increases　by　16.7%.　LD　passivated　using　(NH4)2S　gives　no　evidence　of　degradation　after　1500　hours　of　aging　experiment.　LD　of　non-sulfur-passivation　severely　degrades,　its　output　power　decreases　by　36.8%.　The　time　of　sulfur-passivation　produces　great　difference　on　the　passivation　result　of　LD.　The　experiment　indicates　that　long　time　passivation　can　damage　facet　causing　degradation　of　LD.　5　min　sulfur-passivation　is　best.

关键词：

Diodes Passivation Sulfur Degradation Reliability Semiconducting gallium arsenide Semiconductor lasers

作者机构：

[ 1 ] [Tian, Zengxia]Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Cui, Bifeng]Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Xu, Chen]Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Shu, Xiongwen]Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Zhang, Lei]Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Shen, Guangdi]Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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catanlen@emails.bjut.edu.cn

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