Preparation of cubic boron nitride films by MW-ECR CVD - 文章详情页

作者：

Gao, Zhi-Hua (Gao, Zhi-Hua.) | Chen, Guang-Hua (Chen, Guang-Hua.) | Li, Zhi-Zhong (Li, Zhi-Zhong.) | Deng, Jin-Xiang (Deng, Jin-Xiang.) (学者：邓金祥) | Ding, Yi (Ding, Yi.)

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摘要：

The　preparation　of　cubic　boron　nitride　films　by　using　electron-cyclotron-resonance-enhanced-microwave-plasma　chemical　vapor　deposition　(MW-ECR　CVD).　We　put　forward　the　qualitative　analysis　of　influences　of　the　flux　of　N2　and　H2　on　the　configuration　of　cubic　boron　nitride　films　by　Fourier　transform　infrared　spectrometry　(FTIR).　It　was　found　that　H2　played　an　important　role　on　the　configuration　of　cubic　boron　nitride　films　in　the　BF3-H2-N2-Ar　gaseous　system.　But　N2　didn＇t　show　obvious　infection.　We　analyzed　the　characteristic　of　the　configuration　of　cubic　boron　nitride　films　prepared　by　MW-ECR　CVD　in　primary.

关键词：

Chemical vapor deposition Cubic boron nitride Film preparation Fourier transform infrared spectroscopy Semiconducting films

作者机构：

[ 1 ] [Gao, Zhi-Hua]School of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Chen, Guang-Hua]School of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Li, Zhi-Zhong]School of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Deng, Jin-Xiang]School of Applied Mathematics and Physics, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Ding, Yi]School of Physics, Lanzhou University, Lanzhou 730000, China

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