A　three-step　technique　has　been　developed　to　grow　high　quality　cubic　boron　nitride　(c-BN)　films　by　RF　magnetron　sputtering　on　p-type　Si(111)　substrate.　Possible　reason　responsible　for　the　low　reproducibility　of　the　film,　synthesized　by　conventional　two-step　growth,　was　tentatively　discussed.　An　extra　step,　turning　turbostratic　boron　nitride　(t-BN)　into　rhombohedral　boron　nitride,　was　done　before　the　two-stop　growth,　that　is,　nucleation　experiences　two　steps.　Consequently,　the　reproducibility　of　the　film　considerably　increases.　The　films　were　characterized　with　Fourier　transform　infrared　spectroscopy　(FTIR).　The　results　show　that　c-BN　films　with　cubic　phase　content　being　85%　were　grown　at　a　bias　of　180　V　in　the　first　step　lasting　for　5　minutes.