Effects of sapphire substrate mis-cut angle on the properties of GaN films - 文章详情页

作者：

收录：

EI Scopus PKU CSCD

摘要：

The　undoped　GaN　films　were　grown　on　mis-cut　sapphire　substrates　with　different　angle　(0-0.3°)　by　MOCVD.　Samples　were　investigated　by　microscopy,　double　crystal　X-ray　diffractometry　(DCXRD),　photoluminescence　(PL),　hall　technique　to　character　their　morphological,　crystal　properties.　The　results　revealed　that　the　dislocation　density　of　the　GaN　films　decreased　by　using　a　suitable　angle　of　mis-cut　sapphire　substrate.　With　an　angle　of　0.2°,　the　best　surface　morphological　and　crystal　quality　of　the　GaN　films　can　be　obtained.

关键词：

Gallium nitride Metallorganic chemical vapor deposition Morphology Photoluminescence Sapphire Semiconducting gallium compounds Thin films X ray diffraction analysis

作者机构：

[ 1 ] [Niu, Nan-Hui]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Wang, Huai-Bing]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, Jian-Ping]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Liu, Nai-Xin]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Xing, Yan-Hui]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Li, Tong]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Zhang, Nian-Guo]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Han, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 9 ] [Deng, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 10 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

电子邮件地址：

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至