Study of thermal characteristics of semiconductor light-emitting devices - 文章详情页

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摘要：

The　heating　response　curves　of　temperature　rise　and　thermal　resistance　of　semiconductor　power　emitting-lighting　diodes　are　obtained　according　to　electrical　methods.　The　curve　shows　one　or　more　sidesteps　to　reflect　device＇s　inside　thermal　resistance　constitution　and　physical　structure.　The　temperature　rise　and　thermal　resistance　are　amended　with　a　covering　method.　A　transient　heating　response　theory　is　also　used　to　inspect　the　package　structure　of　the　devices.

关键词：

Efficiency Heat resistance Light emitting diodes Packaging Reliability Service life Structures (built objects) Temperature

作者机构：

[ 1 ] [Zhang, Yuezong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Feng, Shiwei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Xie, Xuesong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Li, Ying]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Yang, Ji]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Sun, Jingying]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Lu, Changzhi]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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