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作者:

Wang, Ting (Wang, Ting.) | Guo, Xia (Guo, Xia.) (学者:郭霞) | Fang, Yuan (Fang, Yuan.) | Liu, Bin (Liu, Bin.) | Shen, Guangdi (Shen, Guangdi.)

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摘要:

GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off (LLO) technique. GaN/Al2O3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400°C. KrF excimer laser with 400-mJ/cm2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy (SEM) combined with energy dispersive X-ray spectrometer (EDS) measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy (AFM) and photoluminescence (PL) measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer.

关键词:

Atomic force microscopy Bonding Energy dispersive spectroscopy Excimer lasers Fusion reactions Gallium nitride Metallorganic chemical vapor deposition Photoluminescence Sapphire Scanning electron microscopy Silicon Solid solutions Substrates Surfaces Thin films X ray spectrometers

作者机构:

  • [ 1 ] [Wang, Ting]Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Guo, Xia]Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Fang, Yuan]Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Liu, Bin]Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Shen, Guangdi]Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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来源 :

Chinese Optics Letters

ISSN: 1671-7694

年份: 2006

期: 7

卷: 4

页码: 416-418

3 . 5 0 0

JCR@2022

ESI学科: PHYSICS;

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SCOPUS被引频次: 139

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