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作者:

Yu, Haiying (Yu, Haiying.) | Cui, Bifeng (Cui, Bifeng.) | Tian, Zengxia (Tian, Zengxia.) | Chen, Yixin (Chen, Yixin.) | Zou, Deshu (Zou, Deshu.) | Liu, Ying (Liu, Ying.) | Shen, Guangdi (Shen, Guangdi.)

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摘要:

A novel high-power semiconductor laser diode (LD) with very large cavity using multi-active-layer cascaded by tunnel-junction was developed. The perpendicular window size of the LD was enlarged extremely and less than 20 degree of the lasing beam divergence was obtained, which benefits the coupling between the LD and the optical fibers. Many types of lensed fibers were used to test with the LD and the coupling efficiencies were increased over 30% comparing with the conventional LD.

关键词:

Diodes Optical fibers Semiconductor lasers Tunnel junctions

作者机构:

  • [ 1 ] [Yu, Haiying]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Yu, Haiying]Electronics and Information Technology Laboratory, Shandong Jianzhu University, Jinan 250101, China
  • [ 3 ] [Cui, Bifeng]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Tian, Zengxia]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Chen, Yixin]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Zou, Deshu]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Liu, Ying]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 8 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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来源 :

Research and Progress of Solid State Electronics

ISSN: 1000-3819

年份: 2006

期: 4

卷: 26

页码: 494-497

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