Temperature characteristics of microwave power SiGe HBTs - 文章详情页

作者：

Yang, Jingwei (Yang, Jingwei.) | Zhang, Wanrong (Zhang, Wanrong.) | Jin, Dongyue (Jin, Dongyue.) | Qiu, Jianjun (Qiu, Jianjun.) | Gao, Pan (Gao, Pan.)

收录：

EI Scopus PKU CSCD

摘要：

Temperature　characteristics　of　SiGe　HBT　are　studied.　Experiment　data　show　that　the　variation　of　VBE　with　temperature　of　SiGe　HBT　is　smaller　than　that　of　homo-junction　silicon　BJT.　The　needed　emitter　ballast　resistance　in　SiGe　HBT　is　thus　smaller　than　that　in　Si　BJT　when　thermal　stability　of　transistors　is　improved.　At　the　same　time,　the　negative　differential　resistance　characteristics　of　SiGe　HBT　is　also　observed　at　a　high　collector-emitter　voltage　and　high　current,　which　can　prevent　the　thermal　instability　of　power　transistors　effectively,　and　this　is　not　the　case　with　Si　devices.　Therefore,　SiGe　HBT　is　proved　to　be　more　suitable　for　microwave　power　devices.

关键词：

Current voltage characteristics Design Heterojunction bipolar transistors Semiconducting germanium compounds Semiconducting silicon compounds Thermodynamic stability

作者机构：

[ 1 ] [Yang, Jingwei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Jin, Dongyue]Physics Department, Liaoning University, Shenyang 110036, China
[ 4 ] [Qiu, Jianjun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Gao, Pan]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

电子邮件地址：

jwang@emails.bjut.edu.cn

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