Light degradation stability of a-Si:H films - 文章详情页

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Various　factors　responsible　for　light　degradation　stability　of　a-Si:H　films,　grown　by　hot　filament　assisted　microwave　electron　synchrotron　resonance　chemical　vapor　deposition　(MWECR　CVD),　were　analyzed　with　Fourier　infrared　spectroscopy　(FTIR)　and　light　degradation　curves.　The　results　show　that　hydrogen　content,　H-Si　bonding　modes　and　hydration　movement　significantly　affect　the　stability　of　a-Si　material.　We　found　that　thin　layer　of　Si　crystalline　micro-grain　grown　on　a-Si　substrate　considerably　improves　the　stability.

关键词：

Chemical vapor deposition Thin films Fourier transform infrared spectroscopy Solar cells Hydration Photodegradation

作者机构：

[ 1 ] [Ma, Zhanjie]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Chen, Guanghua]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 3 ] [He, Bin]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Liu, Guohan]School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
[ 5 ] [Zhu, Xiuhong]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Zhang, Wenli]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Li, Zhizhong]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Gao, Zhihua]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 9 ] [Song, Xuemei]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 10 ] [Deng, Jinxiang]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China

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