780 nm InGaAsP/InGaP/AlGaAs high power semiconductor laser - 文章详情页

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摘要：

Using　metal　organic　chemical　vapor　deposition,　we　fabricate　an　InGaAsP/InGaP/AlGaAs　single　quantum　well　laser　with　a　separate　confinement　heterostructure.　We　calculate　the　gain　spectrum　with　and　without　the　effect　of　interband　relaxation.　The　peak　wavelength　of　the　PL　spectrum　is　764　nm.　Due　to　the　In　carry-over　effect,　the　interface　between　InGaP　and　AlGaAs　is　not　abrupt.　The　performance　of　the　laser　diodes　into　which　a　thin　GaAsP　interlayer　is　inserted　is　better　than　those　with　no　such　interlayer.　The　threshold　current　is　decreased　from　560　to　450　mA,　the　slope　efficiency　is　increased　from　0.61　to　0.7　W/A,　and　the　output　power　is　increased　from　370　to　940　mW.

关键词：

Heterojunctions High power lasers Interfaces (materials) Metallorganic chemical vapor deposition Photoluminescence Quantum well lasers Semiconductor lasers

作者机构：

[ 1 ] [Cao, Yulian]Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
[ 2 ] [Lian, Peng]Department of Electronic Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Wang, Qing]Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
[ 4 ] [Wu, Xuming]Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
[ 5 ] [He, Guorong]Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
[ 6 ] [Cao, Qing]Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
[ 7 ] [Song, Guofeng]Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
[ 8 ] [Chen, Lianghui]Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China

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电子邮件地址：

caoyl@red.semi.ac.cn

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