Variations in Si-H bonding modes and a-Si:H growth by hot filament assisted microwave electron synchrotron resonance chemical vapor deposition - 文章详情页

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a-Si:H　films　were　grown　by　hot　filament　assisted　microwave　electron　synchrotron　resonance　chemical　vapor　deposition.　We　found　that　hot　filament　assistance　increases　the　deposition　rate　and　considerably　improves　the　film　stability;　and　that　the　deposition　rate　increase　with　the　increase　of　the　filament　temperature　and　the　pressure.　In　light-induced　degradation,　infrared　absorption　spectra　were　analyzed　with　baseline　fitting　and　Gaussian　data　fitting.　The　results　show　that　while　hydrogen　content　remains　unchanged,　the　relative　contents　of　Si-H　and　Si-H2　bonding　modes　changes.

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Chemical vapor deposition Film preparation Solar cells Thin films

作者机构：

[ 1 ] [Zhang, Wenli]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Chen, Guanghua]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 3 ] [He, Bin]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Zhu, Xiuhong]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Ma, Zhanjie]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Ding, Yi]School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
[ 7 ] [Liu, Guohan]School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China
[ 8 ] [Gao, Zhihua]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China
[ 9 ] [Song, Xuemei]Key Laboratory of Advanced Functional Materials, Beijing University of Technology, Beijing 100022, China

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