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摘要:
The Ohmic contact and photoresponse of a ZnO single crystal film produced by MOCVD are investigated. The electrical and photoresponsive changes in the ZnO film due to the RF sputter deposition of SiO2 (antireflective coating) are also discussed. A nonalloyed Al/Au metallization scheme forms a good Ohmic contact on the n-type ZnO. RF sputter deposition of SiO2 induces defects which behave as carrier traps and prolongs response time. The photoresponse of the ZnO epitaxial film deteriorates with time.
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来源 :
Chinese Journal of Semiconductors
ISSN: 0253-4177
年份: 2006
期: 1
卷: 27
页码: 96-99
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