DC/DC　converters　to　power　future　CPU　cores　mandate　low-voltage　power　metal-oxide　semiconductor　field-effect　transistors　(MOSFETs)　with　ultra　low　on-resistance　and　gate　charge.　Conventional　vertical　trench　MOSFETs　cannot　meet　the　challenge.　In　this　paper,　we　introduce　an　alternative　device　solution,　the　large-area　lateral　power　MOSFET　with　a　unique　metal　interconnect　scheme　and　a　chip-scale　package.　We　have　designed　and　fabricated　a　family　of　lateral　power　MOSFETs　including　a　sub-10　V　class　power　MOSFET　with　a　record-low　R　DS(ON)　of　1　mΩ　at　a　gate　voltage　of　6　V,　approximately　50%　of　the　lowest　RDS(ON)　previously　reported.　The　new　device　has　a　total　gate　charge　Qg　of　22　nC　at　4.5　V　and　a　performance　figures　of　merit　of　less　than　30　mΩ　-　nC,　a　3　×　improvement　over　the　state　of　the　art　trench　MOSFETs.　This　new　MOSFET　was　used　in　a　100-W　dc/dc　converter　as　the　synchronous　rectifiers　to　achieve　a　3.5-MHz　pulse-width　modulation　switching　frequency,　97%-99%　efficiency,　and　a　power　density　of　970　W/in3.　The　new　lateral　MOSEFT　technology　offers　a　viable　solution　for　the　next-generation,　multimegahertz,　high-density　dc/dc　converters　for　future　CPU　cores　and　many　other　high-performance　power　management　applications.　©　2006　IEEE.