Highly Reliability and Brightness AlGaInP Light-emitting Diodes - 文章详情页

作者：

Tian, Yongtao (Tian, Yongtao.) | Zhang, Zhihua (Zhang, Zhihua.) | Guo, Weiling (Guo, Weiling.) | Shen, Guangdi (Shen, Guangdi.)

收录：

EI Scopus PKU CSCD

摘要：

The　operating　principal　of　tunneling-regenerated-double-active-region　(TRDAR)　AlGalnP　light-emitting　diodes　is　analyzed　on-axis　luminous　intensity　is　tested　under　different　injected　current　and　the　relationship　between　on-axis　luminous　intensity　and　injected　current　is　offered　in　this　paper.　The　emitting　peak　wavelength　of　TRDAR　AlGalnP　light-emitting　diodes　is　620　nm　at　20　mA.　The　average　on-axis　luminous　intensity　of　TRDAR　AlGalnP　light-emitting　diodes　lamps　with　15°　viewing　angle　is　5.5　cd.　Its　life　test　is　carried,　and　the　lifetime　of　TRDAR　AlGalnP　light-emitting　diodes　has　exceeded　1.2　×　105　hours　under　conditions　of　30　mA　direct　current　and　25°C　ambient　temperature.

关键词：

Light emitting diodes Reliability Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Temperature Tunnel junctions

作者机构：

[ 1 ] [Tian, Yongtao]College of Physics Science and Technology, University of Petroleum (East China), Dongying 257061, China
[ 2 ] [Zhang, Zhihua]College of Information and Control Engineering, University of Petroleum (East China), Dongying 257061, China
[ 3 ] [Guo, Weiling]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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电子邮件地址：

yttian1979@163.com

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