Calculation of the extraction efficiency in tunneling-regenerated double-active-region AlGaInP light-emitting diodes - 文章详情页

作者：

Tian, Yongtao (Tian, Yongtao.) | Zhang, Zhihua (Zhang, Zhihua.) | Guo, Weiling (Guo, Weiling.) | Shen, Guangdi (Shen, Guangdi.)

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EI Scopus PKU CSCD

摘要：

A　method　for　calculating　the　extraction　efficiency　of　light-emitting　diodes　is　offered.　The　determinants　of　the　extraction　efficiency　of　tunneling-regenerated　double-active-region　(TRDAR)　AlGaInP　light-emitting　diodes　are　investigated,　including　light　escaping　through　the　top　surface,　light　loss　due　to　absorption　of　diode　bulk,　light　loss　due　to　absorption　of　substrate　and　anode.　The　extraction　efficiency　of　tunneling-regenerated　double-active-region　AlGaInP　light-emitting　diodes　is　calculated.　The　extraction　efficiency　of　5.24%　and　9.16%　for　the　top　active　region　and　the　bottom　active　region　are　obtained　respectively　in　TRDAR　LED　chips.

关键词：

Substrates Semiconducting gallium compounds Semiconducting aluminum compounds Light emitting diodes Tunnel junctions Light absorption Semiconducting indium phosphide

作者机构：

[ 1 ] [Tian, Yongtao]College of Physics Science and Technology, University of Petroleum (East China), Dongying 257061, China
[ 2 ] [Tian, Yongtao]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Zhang, Zhihua]College of Information and Control Engineering, University of Petroleum (East China), Dongying 257061, China
[ 4 ] [Guo, Weiling]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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电子邮件地址：

yttian1979@163.com

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