A　micromachining　Golay-cell　infrared　detector　using　silicon　micromachining　technology　includes　a　movable　sensitive　diaphragm.　The　IR　detector　has　a　tiny　gas　chamber　formed　by　bond　with　diaphragm-die　and　hole-die.　The　movable　sensitive　diaphragm　deflection　under　pressure　resulting　from　gas　expansion　is　available　with　planar　capacitor　between　silicon　diaphragm　electrode　and　metal　electrode.　A　novel　Si/Ti/Au/Au/Ti/Si　bonding　method　based　on　Au/Si　eutectic　bonding　was　presented　for　forming　a　gas　chamber.　The　detector　was　fabricated　and　responded　basically　using　this　bonding　method.　This　method　can　process　selective　area　bonding　and　the　bond　intensity　reaches　to　bulk　silicon　intensity　experimentally.