GaAs/AlGaAs quantum well infrared photodetector with low noise - 文章详情页

作者：

Deng, Jun (Deng, Jun.) | Wang, Bin (Wang, Bin.) | Han, Jun (Han, Jun.) | Li, Jian-Jun (Li, Jian-Jun.) | Shen, Guang-Di (Shen, Guang-Di.)

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EI Scopus PKU CSCD

摘要：

We　present　a　novel　structure　of　multi-quantum　well　infrared　photodetector　(QWIP).　In　the　new　structure　device,　a　p-type　contact　layer　replaced　the　n-type　layer　and　on　the　top　of　the　conventional　structure　of　QWIP,　and　a　small　tunneling　current　replaced　the　large　compensatory　current,　which　made　the　device　with　low　dark　current　and　low　noise　characteristics.　The　experimental　result　of　dark　current　accorded　with　the　calculated　result,　and　the　noise　of　the　new　structure　QWIP　decreased　to　one　third　of　the　conventional　QWIP.

关键词：

Tunnel junctions Semiconducting aluminum compounds Semiconductor quantum wells Current voltage characteristics Signal noise measurement Electron energy levels Photodetectors Metallorganic chemical vapor deposition Semiconducting gallium arsenide

作者机构：

[ 1 ] [Deng, Jun]Laboratory of Beijing Optoelectronic Technology, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Wang, Bin]Laboratory of Beijing Optoelectronic Technology, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Han, Jun]Laboratory of Beijing Optoelectronic Technology, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Li, Jian-Jun]Laboratory of Beijing Optoelectronic Technology, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Shen, Guang-Di]Laboratory of Beijing Optoelectronic Technology, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

电子邮件地址：

dengsn@bjnt.edu.cn

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