The　defects,　their　formation　mechanisms　and　the　properties　of　compact　volume　holographic　storage　of　doped　LiNbO3　crystals　were　analyzed　and　discussed　by　using　the　observing　method　of　etching.　We　try　to　find　out　the　laws　of　the　crystal　etching　in　the　normal　temperature　according　to　the　experiment,　and　observed　the　dislocation　etching　pits　which　is　a　angle　taper　on　the　surface　of　LiNbO3　crystals.　We　measured　the　spread　noise　of　doped　LiNbO3　crystals,　finding　out　the　relation　between　the　crystal　defects　and　picture　quality　according　to　the　experiment.　At　last,　we　find　that　the　crystal　defects　of　Zn:Fe:LiNbO3　are　less　than　Fe:LiNbO3,　and　the　properties　of　compact　volume　holographic　storage　of　the　Zn:Fe:LiNbO3　are　better　than　Fe:LiNbO3.