Decrease of SiGe HBTs' base serial resistance with novel structure and process - 文章详情页

作者：

Shi, Chen (Shi, Chen.) | Yang, Weiming (Yang, Weiming.) | Liu, Sujuan (Liu, Sujuan.) | Xu, Chen (Xu, Chen.) (学者：徐晨) | Chen, Jianxin (Chen, Jianxin.)

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EI Scopus PKU CSCD

摘要：

With　the　novel　modulated　doping　QW　base　and　buried　metal　self-align　process,　the　base　lateral　resistance　and　contact　resistance　of　ultra-thin-base　small-size　SiGe　HBTs　are　decreased　by　42%　and　55%　respectively,　which　provides　an　effective　method　of　resolution　on　base　serial　resistance.

关键词：

Electric resistance Heterojunction bipolar transistors Semiconducting germanium compounds Semiconducting silicon compounds Semiconductor device manufacture Semiconductor device structures Semiconductor device testing Semiconductor quantum wells

作者机构：

[ 1 ] [Shi, Chen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Yang, Weiming]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, Sujuan]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Xu, Chen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Chen, Jianxin]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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