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作者:

Li, Jie (Li, Jie.) | Guo, Chunsheng (Guo, Chunsheng.) | Mo, Yuwei (Mo, Yuwei.) | Xie, Xuesong (Xie, Xuesong.) | Cheng, Yaohai (Cheng, Yaohai.) | Li, Zhiguo (Li, Zhiguo.)

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EI Scopus PKU CSCD

摘要:

A new method, temperature ramp method for rapid evaluation of reliability of microelectronic devices, is proposed and a new model is set up. Using the new model, the microelectronic device's activation energy can be worked and its life can be extrapolated. The range of temperatures used in experiments is so wide that different degradation modes can take place, and the problem of multi-degradation mechanisms can be studied.

关键词:

Activation energy Degradation Electric currents Electronic equipment Extrapolation Life cycle Temperature

作者机构:

  • [ 1 ] [Li, Jie]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Guo, Chunsheng]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Mo, Yuwei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Xie, Xuesong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Cheng, Yaohai]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Li, Zhiguo]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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来源 :

Chinese Journal of Semiconductors

ISSN: 0253-4177

年份: 2005

期: 8

卷: 26

页码: 1662-1666

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ESI高被引论文在榜: 0 展开所有

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