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摘要:
A new method, temperature ramp method for rapid evaluation of reliability of microelectronic devices, is proposed and a new model is set up. Using the new model, the microelectronic device's activation energy can be worked and its life can be extrapolated. The range of temperatures used in experiments is so wide that different degradation modes can take place, and the problem of multi-degradation mechanisms can be studied.
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来源 :
Chinese Journal of Semiconductors
ISSN: 0253-4177
年份: 2005
期: 8
卷: 26
页码: 1662-1666
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