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作者:

Dong, Limin (Dong, Limin.) | Guo, Xia (Guo, Xia.) (学者:郭霞) | Qu, Hongwei (Qu, Hongwei.) | Deng, Jun (Deng, Jun.) | Du, Jinyu (Du, Jinyu.) | Zou, Deshu (Zou, Deshu.) | Shen, Guangdi (Shen, Guangdi.)

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摘要:

Wet oxidation of AlAs/AlGaAs is an important step in the process of the oxide-confined vertical cavity surface emitting lasers (VCSELs). The kinetics of Al0.98Ga0.02As wet oxidation process are investigated in cylindrically symmetric mesa structure. We compare and analyze the rule relation between the stripe, convex and concave mesa, and obtain a novel model which suits 2D cylindrical structure. The simulated data using the novel formulation is in close agreement with the experiment data.

关键词:

Cylinders (shapes) Kinetic theory Mathematical models Oxidation Oxides Semiconducting aluminum compounds Semiconductor lasers Structures (built objects) Two dimensional

作者机构:

  • [ 1 ] [Dong, Limin]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Guo, Xia]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Qu, Hongwei]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Deng, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Du, Jinyu]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Zou, Deshu]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China

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来源 :

Chinese Journal of Semiconductors

ISSN: 0253-4177

年份: 2005

期: SUPPL.

卷: 26

页码: 281-284

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WoS核心集被引频次: 0

SCOPUS被引频次:

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