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作者:

Guo, Xia (Guo, Xia.) (学者:郭霞) | Dong, Limin (Dong, Limin.) | Qu, Hongwei (Qu, Hongwei.) | Da, Xiaoli (Da, Xiaoli.) | Du, Jinyu (Du, Jinyu.) | Deng, Jun (Deng, Jun.) | Shen, Guangdi (Shen, Guangdi.)

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摘要:

980 nm vertical cavity surface emitting lasers (VCSELs) are fabricated by employing metallorganic chemical vapor deposition technique and AlAs/AlGaAs selective wet nitrogen oxidation technique which helps to realize the electric and optical confinement in the VCSEL devices. The effects of oxidation aperture size on the performance of the VCSEL, such as threshold current and series resistance, are analyzed through fabricating VCSELs with different aperture size at the same time. The minimum threshold current is 0.8 mA and the maximum optical output power achieved is about 8 mW.

关键词:

Semiconducting aluminum compounds Surfaces Semiconductor lasers Metallorganic chemical vapor deposition Fabrication Electric currents Nitrogen Oxidation Performance

作者机构:

  • [ 1 ] [Guo, Xia]Beijing Optoelectronic Technology Laboratory, School of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Dong, Limin]Beijing Optoelectronic Technology Laboratory, School of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Qu, Hongwei]Beijing Optoelectronic Technology Laboratory, School of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Da, Xiaoli]Beijing Optoelectronic Technology Laboratory, School of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Du, Jinyu]Beijing Optoelectronic Technology Laboratory, School of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Deng, Jun]Beijing Optoelectronic Technology Laboratory, School of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, School of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China

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来源 :

Chinese Journal of Semiconductors

ISSN: 0253-4177

年份: 2005

期: SUPPL.

卷: 26

页码: 129-131

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