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Author:

Qu, Hongwei (Qu, Hongwei.) | Guo, Xia (Guo, Xia.) (Scholars:郭霞) | Deng, Jun (Deng, Jun.) | Dong, Limin (Dong, Limin.) | Lian, Peng (Lian, Peng.) | Zou, Deshu (Zou, Deshu.) | Shen, Guangdi (Shen, Guangdi.)

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EI Scopus PKU CSCD

Abstract:

The material characteristics of tunnel-junction-regenerated multiple active regions intercavity-contacted Vertical Cavity Surface Emitting Laser have been investigated. The gain peak wavelength, the resonance cavity wavelength, the center wavelength of Distributed Bragg Reflector (DBR) and the thickness deviation of VCSEL were obtained. If the cavity resonance wavelength was above 20 nm longer than the gain peak wavelength, threshold condition couldn't be satisfied, so VCSEL couldn't lase. Tunnel-junction-regenerated two active regions VCSEL lased under room temperature, which was agreed with the analyzed grown parameter. Light output power of 5 mW was obtained at 11 mA for the 8.3 μm oxide aperture, slope efficiency was 0.702 mW/mA, and the emission wavelength was 970 nm.

Keyword:

Materials Growth (materials) Lasers Ohmic contacts Tunnel junctions Emission spectroscopy

Author Community:

  • [ 1 ] [Qu, Hongwei]Optoelectronic Technology Laboratory, School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Guo, Xia]Optoelectronic Technology Laboratory, School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Deng, Jun]Optoelectronic Technology Laboratory, School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Dong, Limin]Optoelectronic Technology Laboratory, School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Lian, Peng]Optoelectronic Technology Laboratory, School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Zou, Deshu]Optoelectronic Technology Laboratory, School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Shen, Guangdi]Optoelectronic Technology Laboratory, School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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Source :

Research and Progress of Solid State Electronics

ISSN: 1000-3819

Year: 2005

Issue: 4

Volume: 25

Page: 499-502,530

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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