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作者:

Liu, Qiaoli (Liu, Qiaoli.) | Tian, Huijun (Tian, Huijun.) | Li, Jingwei (Li, Jingwei.) | Hu, Anqi (Hu, Anqi.) | He, Xiaoying (He, Xiaoying.) | Sui, Mauling (Sui, Mauling.) | Guo, Xia (Guo, Xia.) (学者:郭霞)

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EI Scopus SCIE

摘要:

Flexible high-sensitivity photodetectors are desirable for use in future wearable optoelectronics. Graphene is attracting considerable attention because of its outstanding electrical, optical, and mechanical properties, which make graphene appealing in flexible optoelectronics and photodetection applications. In this paper, an internal current gain mechanism is proposed based on a 2D/0D photodetection system. The carrier density in the 2D material can be amplified via Fermi level modulation when a 0D quantum dot absorbs photons. An ultrahigh responsivity of more than 10(10) A W-1 and fW-scale light detectivity are achieved at room temperature using the flexible transfer-free hybrid graphene/Cu2O quantum dot photodetector developed in this work. After excessive bending, the responsivity of the photodetector still reaches 10(6) A W-1, thus demonstrating the promising flexibility of the device.

关键词:

Cu2O quantum dots gain mechanism graphene photodetectors ultrahigh responsivity

作者机构:

  • [ 1 ] [Liu, Qiaoli]Beijing Univ Posts & Telecommun, Sch Elect Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 2 ] [Hu, Anqi]Beijing Univ Posts & Telecommun, Sch Elect Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 3 ] [He, Xiaoying]Beijing Univ Posts & Telecommun, Sch Elect Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 4 ] [Guo, Xia]Beijing Univ Posts & Telecommun, Sch Elect Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 5 ] [Liu, Qiaoli]Beijing Univ Technol, Sch Informat, Beijing 100124, Peoples R China
  • [ 6 ] [Tian, Huijun]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Li, Jingwei]Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 8 ] [Sui, Mauling]Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China

通讯作者信息:

  • 郭霞

    [Guo, Xia]Beijing Univ Posts & Telecommun, Sch Elect Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;;[Sui, Mauling]Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China

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来源 :

ADVANCED OPTICAL MATERIALS

ISSN: 2195-1071

年份: 2019

期: 20

卷: 7

9 . 0 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:79

JCR分区:1

被引次数:

WoS核心集被引频次: 33

SCOPUS被引频次: 31

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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