n-GaN ohmic contact with Cr/Au/Ni/Au - Details

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Abstract：

To　obtain　ohmic　contact　to　n-GaN　with　a　low　contact　resistivity,　Cr/Au/Ni/Au　metallic　system　that　was　fabricated　in　n-GaN　materials　has　been　developed.　The　contact　resistivity　of　ohmic　contact　was　tested　and　analyzed　at　different　temperatures.　The　contact　resistivity　of　Cr/Au/Ni/Au　is　about　0.32　mΩ·cm2　at　room　temperature.　With　the　increasing　of　temperature,　the　contact　resistivity　of　Cr/Au/Ni/Au　increases　a　little.　At　300°C,　its　contact　resistivity　is　0.65　mΩ·cm2.　The　ohmic　contact　is　suitably　used　at　high　temperature.

Keyword：

Semiconductor growth Gold Titanium Current voltage characteristics Aluminum Semiconducting gallium compounds Nickel Ohmic contacts

Author Community：

[ 1 ] [Xie, Xue-Song]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Zhang, Xiao-Ling]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Lu, Chang-Zhi]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Wu, Li]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Yuan, Ying]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Li, Zhi-Guo]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Cao, Chun-Hai]Nanjing Solid-state Devices Institute, Nanjing 210016, China

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Source ：

Journal of Beijing University of Technology

ISSN： 0254-0037

Year： 2005

Issue： 5

Volume： 31

Page： 449-451

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 0

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信息学部

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