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摘要:
To obtain ohmic contact to n-GaN with a low contact resistivity, Cr/Au/Ni/Au metallic system that was fabricated in n-GaN materials has been developed. The contact resistivity of ohmic contact was tested and analyzed at different temperatures. The contact resistivity of Cr/Au/Ni/Au is about 0.32 mΩ·cm2 at room temperature. With the increasing of temperature, the contact resistivity of Cr/Au/Ni/Au increases a little. At 300°C, its contact resistivity is 0.65 mΩ·cm2. The ohmic contact is suitably used at high temperature.
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来源 :
Journal of Beijing University of Technology
ISSN: 0254-0037
年份: 2005
期: 5
卷: 31
页码: 449-451
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