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摘要:
By the compared studies on the three AlGaN/GaN heterojunction field effect transistor (HFET) structures with normal, inverted, and double heterostructure, it is found that the normal structure is the most simple one and is easily controllable for layer growth. The characteristics of inverted structure are poorer than that with normal structure, and those characteristics with double heterostructure are better than that with normal and inverted structure, but its layer growth is much more complicated.
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来源 :
Chinese Journal of Semiconductors
ISSN: 0253-4177
年份: 2005
期: SUPPL.
卷: 26
页码: 155-157
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