Oriented growth of Ta2O5 films induced by substrate bias - 文章详情页

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EI Scopus

摘要：

Tantalum　pentoxide　(Ta2O5)　films　with　high　〈001〉　orientation　have　exceptionally　high　dielectric　constant.　Usually,　oriented　Ta2O5　films　were　fabricated　by　post-annealing.　In　this　paper,　as-deposited　Ta2O5　films　with　high　〈001〉　orientation　were　sputtered　at　low　temperature　with　substrate　bias.　The　orientation　of　the　films　is　modified　to　be　better　with　the　bias　being　increased.　The　bias　effect　on　the　orientation　of　the　films　is　discussed　in　details.　©　2003　Elsevier　Science　B.V.　All　rights　reserved.

关键词：

Annealing Crystal orientation Dielectric materials Film growth Nucleation Permittivity Substrates Tantalum compounds

作者机构：

[ 1 ] [Huang, A.P.]Quantum Materials Laboratory, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Xu, Sh.L.]Quantum Materials Laboratory, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Zhu, M.K.]Quantum Materials Laboratory, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Li, G.H.]Quantum Materials Laboratory, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Liu, T.]Beijing Synchrt. Radiation Facility, Chinese Academy of Science, Beijing 100039, China
[ 6 ] [Wang, B.]Quantum Materials Laboratory, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Yan, H.]Quantum Materials Laboratory, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

[zhu, m.k.]quantum materials laboratory, beijing university of technology, beijing 100022, china

电子邮件地址：

zhumk@bjut.edu.cn

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