Measuring junction temperature inhomogeneity of double-chip IGBT modules by electrical method - 文章详情页

作者：

Wang, Sijin (Wang, Sijin.) | Guo, Chunsheng (Guo, Chunsheng.) | Liu, Boyang (Liu, Boyang.) (学者：刘波扬) | Wei, Lei (Wei, Lei.) | Zhang, Shiwei (Zhang, Shiwei.)

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摘要：

The　electrical　method　for　measuring　junction　temperature　inhomogeneity　of　IGBT　modules　has　always　been　a　scientific　research　problem　in　the　field　of　microelectronics.　This　paper　proposes　a　new　type　of　electrical　method　for　measuring　junction　temperature　inhomogeneity,　which　is　different　from　the　conventional　electrical　methods　using　a　single　test　condition.　The　collector　currents　measured　in　this　paper　are　at　high　and　low　gate　voltage,　respectively.　Based　on　the　temperature　calibration　curve　and　the　IGBT　chips　parallel　model,　the　junction　temperature　inhomogeneity　of　the　double-chip　IGBT　modules　was　analyzed　successfully,　and　the　junction　temperature　of　the　two　chips　were　obtained　respectively.　©　2020　IEEE.

关键词：

Electric variables measurement Electron devices Insulated gate bipolar transistors (IGBT) Microelectronics

作者机构：

[ 1 ] [Wang, Sijin]Beijing University of Technology, Faculty of Information Technology, Beijing, China
[ 2 ] [Guo, Chunsheng]Beijing University of Technology, Faculty of Information Technology, Beijing, China
[ 3 ] [Liu, Boyang]Beijing University of Technology, Faculty of Information Technology, Beijing, China
[ 4 ] [Wei, Lei]Beijing University of Technology, Faculty of Information Technology, Beijing, China
[ 5 ] [Zhang, Shiwei]Beijing University of Technology, Faculty of Information Technology, Beijing, China

通讯作者信息：

[guo, chunsheng]beijing university of technology, faculty of information technology, beijing, china

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