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作者:

Chen, Yuzheng (Chen, Yuzheng.) | Feng, Shiwei (Feng, Shiwei.) (学者:冯士维) | Zhang, Yamin (Zhang, Yamin.) | He, Xin (He, Xin.) | Bai, Kun (Bai, Kun.) | Li, Xuan (Li, Xuan.)

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EI Scopus

摘要:

The interfacial thermal resistance between two solid materials is usually large, but there is still no way to eliminate it nor uniform measurement standard. Therefore, in thermal measurement technology, because the surface roughness of material directly affects the interface morphology, the change of total thermal resistance caused by the thermal contact resistance (TCR) fluctuations disturbs the accuracy of internal thermal analysis of the device. We prepared samples with different surface roughness and performed thermal measurements on them, compared with the test under vacuum environment and the condition filled with thermal interface materials, respectively. We found the heat transfer mechanism at the fixed interface. More importantly, it is shown that in the interval of surface roughness Ra © 2020 IEEE.

关键词:

Heat transfer Surface roughness Contact resistance Morphology Thermal insulating materials Vacuum applications Electron devices Thermal variables measurement Thermal conductivity of solids Interfaces (materials) Thermoanalysis

作者机构:

  • [ 1 ] [Chen, Yuzheng]Beijing University of Technology, Novel Semiconductor Devices and Reliability Lab, Beijing; 100124, China
  • [ 2 ] [Feng, Shiwei]Beijing University of Technology, Novel Semiconductor Devices and Reliability Lab, Beijing; 100124, China
  • [ 3 ] [Zhang, Yamin]Beijing University of Technology, Novel Semiconductor Devices and Reliability Lab, Beijing; 100124, China
  • [ 4 ] [He, Xin]Beijing University of Technology, Novel Semiconductor Devices and Reliability Lab, Beijing; 100124, China
  • [ 5 ] [Bai, Kun]Beijing University of Technology, Novel Semiconductor Devices and Reliability Lab, Beijing; 100124, China
  • [ 6 ] [Li, Xuan]Beijing University of Technology, Novel Semiconductor Devices and Reliability Lab, Beijing; 100124, China

通讯作者信息:

  • 冯士维

    [feng, shiwei]beijing university of technology, novel semiconductor devices and reliability lab, beijing; 100124, china

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年份: 2020

页码: 43-47

语种: 英文

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 4

ESI高被引论文在榜: 0 展开所有

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