The study of temperature-dependent degradation of optical output on 808 nm GaAs-based high-power laser diode bars - 文章详情页

作者：

Hao, Tieying (Hao, Tieying.) | Feng, Shiwei (Feng, Shiwei.) (学者：冯士维) | Zheng, Xiang (Zheng, Xiang.) | Bai, Kun (Bai, Kun.)

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EI Scopus

摘要：

The　degradation　mechanism　of　808nm　GaAs-based　high-power　laser　diode　bars　(LDBs)　with　6　single　laser　diodes　was　investigated　using　infrared　thermography　and　photoemission　microscopy.　Over　time,　measurements　of　output　power　indicated　that　one　of　the　6　laser　bars　had　a　serious　degradation　of　output　power.　Infrared　imaging　and　photoemission　microscopy　revealed　that　solder　voids　during　packaging　resulted　in　premature　failure　due　to　high　temperatures　in　the　lasing　region.　The　current　reliability　of　LDB　devices　is　compromised　by　these　packaging　defects.　©　2020　IEEE.

关键词：

III-V semiconductors Degradation Semiconducting gallium Gallium arsenide Thermography (imaging) High power lasers Semiconductor lasers Photoemission Diodes

作者机构：

[ 1 ] [Hao, Tieying]Beijing University of Technology, Faculty of Information Technology, College of Microelectronics, Beijing, China
[ 2 ] [Feng, Shiwei]Beijing University of Technology, Faculty of Information Technology, College of Microelectronics, Beijing, China
[ 3 ] [Zheng, Xiang]Beijing University of Technology, Faculty of Information Technology, College of Microelectronics, Beijing, China
[ 4 ] [Bai, Kun]Beijing University of Technology, Faculty of Information Technology, College of Microelectronics, Beijing, China

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