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作者:

Chen, Zhongyuan (Chen, Zhongyuan.) | Wang, Peng (Wang, Peng.) | Li, Jinyuan (Li, Jinyuan.) | Li, Hao (Li, Hao.) | Liu, Yunong (Liu, Yunong.) | Guo, Chunsheng (Guo, Chunsheng.)

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摘要:

With the wide use of flexible transmission technology, IGBT chip technology is developing rapidly. The stakpak IGBT chip has the advantages of double-sided heat dissipation that the traditional welded IGBT does not have, but the unclear understanding of the multi physical field interaction with it has become the bottleneck of its wide application. In this paper, according to the Fourier expansion formula, the simulation model is built by SolidWorks, and the finite element analysis software ANSYS Workbench is used. The ANSYS Workbench sets the simulation conditions and obtains the double-sided heat flux of the stakpak IGBT sub module, and compares it with the data in the actual working condition to verify the accuracy of the simulation, so as to provide theoretical support for the improvement of the stability and safety of the stakpak IGBT device in operation. © 2020 ACM.

关键词:

Computer software Insulated gate bipolar transistors (IGBT) Heat flux

作者机构:

  • [ 1 ] [Chen, Zhongyuan]State Key Laboratory of Advanced Transmission Technology, Global Energy Interconnection Research Institute Co. Ltd, Beijing, China
  • [ 2 ] [Wang, Peng]State Key Laboratory of Advanced Transmission Technology, Global Energy Interconnection Research Institute Co. Ltd, Beijing, China
  • [ 3 ] [Li, Jinyuan]State Key Laboratory of Advanced Transmission Technology, Global Energy Interconnection Research Institute Co. Ltd, Beijing, China
  • [ 4 ] [Li, Hao]Novel Semiconductor Devices and Reliability Lab, Beijing University of Technology, Beijing, China
  • [ 5 ] [Liu, Yunong]Novel Semiconductor Devices and Reliability Lab, Beijing University of Technology, Beijing, China
  • [ 6 ] [Guo, Chunsheng]Novel Semiconductor Devices and Reliability Lab, Beijing University of Technology, Beijing, China

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年份: 2020

语种: 英文

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