The　imaging　systems　are　widespread　observation　tools　used　in　the　national　defense,　industry　and　a　number　of　aspects　in　science　and　technology.　The　CMOS　image　sensors　which　serve　as　the　core　part　of　optical　imaging　systems　and　detecting　systems,　are　highly　susceptible　to　laser　interference　and　destruction.　Therefore,　it　is　of　great　theoretical　and　practical　significance　to　study　the　damage　characteristics　of　CMOS　image　sensor.　There　are　many　researches　on　the　damage　phenomena　of　CMOS　image　sensors　irradiated　by　continuous　laser,　ns-laser,　ms-laser　and　fs-laser,　but　the　damage　effects　of　CMOS　irradiated　by　the　hundred　picoseconds　fiber　laser　are　few　investigated.　In　this　work,　we　used　an　all-fiber　MOPA　ps-pulsed　laser　system　which　generates　pulse　width　of　226.5　ps　and　average　power　of　20　W　with　high　beam　quality　and　pulse　stability　to　irradiate　the　CMOS　at　repetition　rate　of　9.6　MHz　and　2.4　MHz.　The　experimental　results　showed　that　with　the　increase　of　laser　power　density,　the　phenomena　of　over　saturation　effect,　saturated　crosstalk　effect,　black　line　damage　and　black　lines　semi-cross　damage　appeared　at　different　repetition　rates.　And　the　measured　threshold　and　damage　mechanism　of　CMOS　were　studied.　Besides,　based　on　the　hydrodynamics　theory,　the　laser-induced　plasma　density　and　temperature　distribution　of　various　materials　(aluminum,　copper　and　silicon)　irradiated　by　the　ps-laser　were　simulated,　which　provide　a　theoretical　basis　for　the　interaction　of　metals　and　semiconductors　by　the　hundred　picoseconds　fiber　laser　©　COPYRIGHT　SPIE.　Downloading　of　the　abstract　is　permitted　for　personal　use　only.