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作者:

Shuai, Du (Shuai, Du.) | Weiling, Guo (Weiling, Guo.) | Liang, Lei (Liang, Lei.) | Tianyu, Lin (Tianyu, Lin.)

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EI Scopus

摘要:

GaN as the third generation semiconductor material has good prospects for development. The wide bandgap of GaN enables it to work at high temperature, and has higher breakdown voltage and better breakdown characteristics. The structure of AlGaN/GaN based high electron mobility transistor (AlGaN/GaN HEMT) is simulated and analyzed by using simulation software Silvaco ATLAS. Firstly, the effect of field plate structure on breakdown voltage is introduced, and then the effect of field plate length on breakdown voltage of devices is analyzed. The results show that the change of field plate length has great influence on breakdown voltage, and the optimal value is determined by testing, which has practical guiding significance for the actual device fabrication. © 2019 IEEE.

关键词:

Aluminum gallium nitride Computer software Electric breakdown Electronic equipment testing Gallium nitride High electron mobility transistors III-V semiconductors Optimal systems Plates (structural components) Semiconducting gallium compounds Structural optimization Wide band gap semiconductors

作者机构:

  • [ 1 ] [Shuai, Du]BEIJING UNIVERSITY of TECHNOLOGY, Beijing, China
  • [ 2 ] [Weiling, Guo]BEIJING UNIVERSITY of TECHNOLOGY, Beijing, China
  • [ 3 ] [Liang, Lei]BEIJING UNIVERSITY of TECHNOLOGY, Beijing, China
  • [ 4 ] [Tianyu, Lin]BEIJING UNIVERSITY of TECHNOLOGY, Beijing, China

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年份: 2019

语种: 英文

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 2

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