Depletion-mode　gallium　nitride　(GaN)　high-electron-mobility　transistors　(HEMTs)　need　to　connect　with　an　enhancement-mode　silicon　(Si)　MOSFET　for　cascoded　structures　in　order　to　achieve　normally-off　operation.　The　devices　are　submitted　to　electrical　overstress　to　investigate　the　degradation　phenomenon.　The　results　demonstrate　that　degradation　near　the　rated　voltage　of　enhancement-mode　GaN　(e-GaN)　Cascoded　FETs　can　be　a　time-dependent　process.　There　is　no　significant　degradation　of　on-resistance　and　saturation　current　after　a　period　of　time　for　devices　experienced　320V　stress.　The　electrical　characteristics　of　the　devices　are　measured　after　6　days　of　natural　recovery.　The　on-resistance　and　saturation　current　of　all　devices　exhibit　reversibility,　while　the　gate/source　leakage　current　is　irreversible.　©　2019　IEEE.