GaN-based　blue　light-emitting　diodes　(LEDs)　with　patterned　SiO2　passivation　layer　and　discontinuous　current　block　layer　(CBL)　has　been　proposed　and　fabricated.　The　patterned　SiO2　passivation　layer　is　inserted　between　Indium　tin　oxide　(ITO)　and　P/N　electrodes,　and　has　a　series　of　windows　under　the　P　and　N　electrodes,　it　can　not　only　isolate　the　N　electrode　from　the　sidewall　to　prevent　leakage,　but　also　can　re-contact　the　P　electrode　with　ITO　to　form　discontinuous　P　electrode　structure　and　current　injection.　For　the　etching　of　active　region,　we　use　the　method　that　partially　etched　to　form　a　discontinuous　N-GaN　mesa,　which　can　reduce　the　loss　of　the　active　area　and　improve　the　light　emission　intensity　of　the　LEDs.　It　can　be　called　discontinuous　N-electrode　structure.　In　addition,　the　discontinuous　CBL　deposited　between　P-GaN　and　ITO　can　increase　the　light　extract　efficiency　from　the　active　region　under　the　P　electrode　compared　to　the　conventional　LED　structure.　As　a　result,　at　an　injection　current　of　150mA,　the　light　output　power　of　the　LED　with　patterned　SiO2　passivation　layer　and　discontinuous　CBL　was　7.06%　higher　than　that　of　conventional　structure　LED.　What＇s　more,　at　50mA,　the　LED　with　the　patterned　SiO2　passivation　layer　and　discontinuous　CBL　structure　shows　the　lower　forward　voltage　of　3.29V　compared　with　the　conventional　LED　of　3.41V.　©　2019　IEEE.