Simulation study on temperature characteristics of IGBT switching with polysilicon distributed gate resistance effect - 文章详情页

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In　this　paper,　based　on　the　current　crowding　effect　appearing　in　the　IGBT　switching　process,　the　structural　model　of　a　high-voltage　4-cell　IGBT　established.　The　gate　resistance　and　distributed　gate　resistance　are　used　to　simulate　the　distribution　of　three　types　of　gate-bus　bars.　The　temperature　distribution　of　IGBT　cells　during　switching　are　simulated　by　Sentaurus　TCAD　software.　The　influence　of　current　crowding　and　the　gate　resistance　on　the　temperature　distribution　of　IGBT　is　analyzed.　The　results　show　that　the　reasonable　distributed　gate　resistance　has　obvious　improvement　on　the　uneven　temperature　distribution　caused　by　current　crowding.　©　2019　IEEE.

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Insulated gate bipolar transistors (IGBT) Temperature distribution

作者机构：

[ 1 ] [Sun, Wanru]Beijing University of Technology, Faculty of Information Technology, Beijing, China
[ 2 ] [Wu, Yu]Beijing University of Technology, Faculty of Information Technology, Beijing, China
[ 3 ] [Zhou, Xintian]Beijing University of Technology, Faculty of Information Technology, Beijing, China
[ 4 ] [Gong, Chao]Beijing University of Technology, Faculty of Information Technology, Beijing, China
[ 5 ] [Wang, Lihao]Beijing University of Technology, Faculty of Information Technology, Beijing, China
[ 6 ] [Li, Longfei]Beijing University of Technology, Faculty of Information Technology, Beijing, China

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