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作者:

Kiani, Maryam (Kiani, Maryam.) | Kiani, Abdul Basit (Kiani, Abdul Basit.) | Khan, Syed Ali (Khan, Syed Ali.) | Rehmana, Shafiq Ur (Rehmana, Shafiq Ur.) | Khan, Qudrat Ullah (Khan, Qudrat Ullah.) | Mahmood, Ikhtesham (Mahmood, Ikhtesham.) | Saleemi, Awais Sadique (Saleemi, Awais Sadique.) | Jalil, Abdul (Jalil, Abdul.) | Sohail, Muhammad (Sohail, Muhammad.) | Zhu, Ling (Zhu, Ling.)

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EI Scopus SCIE

摘要:

Gd and Sn co-doped BiFeO3 nanoparticles were synthesized by sol-gel route and Bi0.95Gd0.05Fe0.93Sn0.05O3/Nitrogen doped graphene nanohybrid (BGFSO/NG, where NG: 1%, 2%, 3%, 4%, 5%, 6%) were synthesized by sprinkling BGFSO nanoparticles and NG into ethanol solution followed by thermal drying. Structural and morphological properties of BiFeO3 (BFO) nanoparticles, BGFSO nanoparticles, NG and BGFSO/NG, were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The crystallite size BGFSO nanoparticle is about 20 nm. The photocatalytic activities of the as-prepared BiFeO3 (BFO) nanoparticles, BGFSO, NG and BGFSO/NG nanohybrid were measured by the degradation of methyl orange (MO) under simulated sunlight irradiation. BGFSO/N-G nanohybrid shows enhanced photocatalytic activity. The improved photo catalytic activity is attributed to the effective transfer of photogenerated electrons from nanoparticles NG nanosheets, consequently leads to an increased availability of h + for the photocatalytic reaction. Additionally, hydroxyl (center dot OH) radicals were detected by the photoluminescence method through terephthalic acid (TPA) as a probe molecule and are found to be generated on the irradiated BGFSO and BGFSO/NG.

关键词:

Nitrogen doped graphene Photocatalytic activity Sol-gel synthesis Spinal BiFeO3

作者机构:

  • [ 1 ] [Kiani, Maryam]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Nanhai Ave 3688, Shenzhen 518060, Guangdong, Peoples R China
  • [ 2 ] [Khan, Syed Ali]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Nanhai Ave 3688, Shenzhen 518060, Guangdong, Peoples R China
  • [ 3 ] [Rehmana, Shafiq Ur]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Nanhai Ave 3688, Shenzhen 518060, Guangdong, Peoples R China
  • [ 4 ] [Khan, Qudrat Ullah]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Nanhai Ave 3688, Shenzhen 518060, Guangdong, Peoples R China
  • [ 5 ] [Saleemi, Awais Sadique]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Nanhai Ave 3688, Shenzhen 518060, Guangdong, Peoples R China
  • [ 6 ] [Jalil, Abdul]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Nanhai Ave 3688, Shenzhen 518060, Guangdong, Peoples R China
  • [ 7 ] [Zhu, Ling]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Nanhai Ave 3688, Shenzhen 518060, Guangdong, Peoples R China
  • [ 8 ] [Kiani, Maryam]Natl Univ Sci & Technol, Sch Nat Sci, Dept Phys, Islamabad 44000, Pakistan
  • [ 9 ] [Kiani, Abdul Basit]Beijing Univ Technol, Dept Informat & Commun Engn, Beijing, Peoples R China
  • [ 10 ] [Sohail, Muhammad]Shenzhen Univ, Inst Adv Study, Shenzhen, Peoples R China
  • [ 11 ] [Mahmood, Ikhtesham]Shenzhen Univ, Minist Educ, Key Lab Optoelect Devices & Syst, Shenzhen, Peoples R China

通讯作者信息:

  • [Zhu, Ling]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Nanhai Ave 3688, Shenzhen 518060, Guangdong, Peoples R China

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来源 :

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

ISSN: 0022-3697

年份: 2019

卷: 130

页码: 222-229

4 . 0 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:50

JCR分区:2

被引次数:

WoS核心集被引频次: 18

SCOPUS被引频次: 19

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 4

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