The　material　of　doping　transition　metal(TM)　in　chalcogenide　compound　such　as　ZnS　and　ZnSe　can　be　used　in　sensors,　nonlinear　optics,　optical　thin-films　and　mid-infrared　area　because　of　their　faster　optical　response　time,　wider　transparency　range　of　mid-infrared　and　higher　mid-infrared　transmittance,　low　optical　loss　and　phonon　energy.　In　this　paper,　the　ceramic　targets　of　(ZnS/Se)0.4(Co)x(Ga2O3)0.6-x　(x=0.1,　0.3　and　0.5)　were　prepared　by　high　temperature　solid　state　reaction.　The　mass　loss　rate,　shrinkage　rate　and　molar　ration　were　calculated.　XRD,　absorption　spectrum　and　AFM&OM　were　investigated.　All　of　the　results　are　shown　that　the　optimum　doping　concentration　is　(ZnS/Se)0.4(Co)0.5(Ga2O3)0.1　(namely　x=0.5),　and　the　optimum　intering　temperature　are　in　the　range　1000~1200.　Besides,　the　zinc-blende　structure　on　ceramics　targets　was　confirmed　by　XRD.　A　broad　application　range　from　VIS　to　Mid-infrared　was　suggested　by　absorption　spectra.　The　optimal　base　material　ZnSe　was　proved　by　AFM　and　OM.　All　these　results　indicate　that　bulks　of　(ZnS/Se)0.4(Co)x(Ga2O3)0.6-x　are　most　promising　materials　in　future.　©　2019　Trans　Tech　Publications　Ltd,　Switzerland.