Simulation study on current collapse effect of e GaN HEMT - 文章详情页

作者：

Weiling, Guo (Weiling, Guo.) | Qijing, Ma (Qijing, Ma.) | Shuai, Du (Shuai, Du.) | Tianyu, Lin (Tianyu, Lin.) | Yanxu, Zhu (Yanxu, Zhu.)

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摘要：

GaN　high　electron　mobility　transistor(GaN　HEMT)　has　high　channel　electron　concentration,　high　electron　mobility　and　high　breakdown　voltage,　which　makes　it　have　great　development　prospects　in　high　frequency,　microwave　and　other　fields.　In　the　development　of　GaN　HEMT,　suppressing　current　collapse　has　always　been　the　focus　and　difficulty　of　research.　Based　on　SILVACO　TCAD　simulation　software,　the　current　collapse　suppression　by　field　plate　structure　is　studied　and　discussed　in　this　paper.　Firstly,　the　model　of　enhanced　GaN　HEMT　device　is　established　and　its　correctness　is　verified.　Then,　the　phenomenon　of　current　collapse　and　virtual　gate　model　are　introduced.　From　the　theory　of　improving　breakdown　voltage　of　device　by　field　plate　structure　as　the　starting　point,　field　plate　structure　is　added　to　the　device　model　and　simulation　experiments　are　carried　out.　According　to　the　results,　the　principle　of　suppression　current　collapse　by　field　plate　structure　is　analyzed,　and　the　correctness　of　virtual　grid　model　is　verified.　©　2019　IEEE.

关键词：

Computer software Electric breakdown Electric current measurement Electron mobility Energy gap Gallium nitride High electron mobility transistors III-V semiconductors Lighting Plates (structural components) Wide band gap semiconductors

作者机构：

[ 1 ] [Weiling, Guo]Beijing University of Technology, Key Laboratory of Optoelectronic Technology under the Ministry of Education, Beijing; 100124, China
[ 2 ] [Weiling, Guo]Beijing University of Technology, No.100, Pingleyuan, Chaoyang District, Beijing, China
[ 3 ] [Qijing, Ma]Beijing University of Technology, Key Laboratory of Optoelectronic Technology under the Ministry of Education, Beijing; 100124, China
[ 4 ] [Qijing, Ma]Beijing University of Technology, No.100, Pingleyuan, Chaoyang District, Beijing, China
[ 5 ] [Shuai, Du]Beijing University of Technology, Key Laboratory of Optoelectronic Technology under the Ministry of Education, Beijing; 100124, China
[ 6 ] [Shuai, Du]Beijing University of Technology, No.100, Pingleyuan, Chaoyang District, Beijing, China
[ 7 ] [Tianyu, Lin]Beijing University of Technology, Key Laboratory of Optoelectronic Technology under the Ministry of Education, Beijing; 100124, China
[ 8 ] [Tianyu, Lin]Beijing University of Technology, No.100, Pingleyuan, Chaoyang District, Beijing, China
[ 9 ] [Yanxu, Zhu]Beijing University of Technology, Key Laboratory of Optoelectronic Technology under the Ministry of Education, Beijing; 100124, China
[ 10 ] [Yanxu, Zhu]Beijing University of Technology, No.100, Pingleyuan, Chaoyang District, Beijing, China

通讯作者信息：

[weiling, guo]beijing university of technology, no.100, pingleyuan, chaoyang district, beijing, china;;[weiling, guo]beijing university of technology, key laboratory of optoelectronic technology under the ministry of education, beijing; 100124, china

电子邮件地址：

guoweiling@bjut.edu.cn

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